APT33GF120B2RDQ2G

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Part Number	APT33GF120B2RDQ2G
Manufacturer	Microchip Technology
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	IGBT 1200V 64A 357W TMAX
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	APT33GF120B2RDQ2G PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 25 - Dec 29 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
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APT33GF120B2RDQ2G Specifications

Part Number:	APT33GF120B2RDQ2G
Brand:	Microchip Technology
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	Microchip Technology
Product Status:	Active
IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	64 A
Current - Collector Pulsed (Icm):	75 A
Vce(on) (Max) @ Vge, Ic:	3V @ 15V, 25A
Power - Max:	357 W
Switching Energy:	1.315mJ (on), 1.515mJ (off)
Input Type:	Standard
Gate Charge:	170 nC
Td (on/off) @ 25°C:	14ns/185ns
Test Condition:	800V, 25A, 4.3Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3 Variant
Supplier Device Package:	-

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