2N6351E3

2N6351E3
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Part Number 2N6351E3
Manufacturer Microchip Technology
Category Discrete SemiconductorTransistors - Bipolar (BJT) - Single
Description POWER BJT
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models 2N6351E3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Sep 21 - Sep 25 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

2N6351E3 Specifications

Part Number:2N6351E3
Brand:Microchip Technology
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - Single
Manufacturer:Microchip Technology
Product Status:Active
Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):5 A
Voltage - Collector Emitter Breakdown (Max):150 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 10mA, 5A
Current - Collector Cutoff (Max):1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 5A, 5V
Power - Max:1 W
Frequency - Transition:-
Operating Temperature:-65°C ~ 200°C
Mounting Type:Through Hole
Package / Case:TO-205AC, TO-33-4 Metal Can
Supplier Device Package:TO-33

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Quick Inquiry

In Stock 3410 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$29.70000$29.7

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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