2N6301E3

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Part Number	2N6301E3
Manufacturer	Microchip Technology
Category	Discrete Semiconductor › Transistors - Bipolar (BJT) - Single
Description	TRANS NPN DARL 80V 500UA TO66
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	2N6301E3 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 28 - Dec 02 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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2N6301E3 Specifications

Part Number:	2N6301E3
Brand:	Microchip Technology
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - Bipolar (BJT) - Single
Manufacturer:	Microchip Technology
Product Status:	Active
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	500 µA
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	3V @ 80mA, 8A
Current - Collector Cutoff (Max):	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	750 @ 4A, 3V
Power - Max:	75 W
Frequency - Transition:	-
Operating Temperature:	-55°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-213AA, TO-66-2
Supplier Device Package:	TO-66 (TO-213AA)

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