LSIC1MO120E0160

LSIC1MO120E0160
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Part Number LSIC1MO120E0160
Manufacturer Littelfuse Inc.
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description SICFET N-CH 1200V 22A TO247-3
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models LSIC1MO120E0160 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Nov 30 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

LSIC1MO120E0160 Specifications

Part Number:LSIC1MO120E0160
Brand:Littelfuse Inc.
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Littelfuse Inc.
Product Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:200mOhm @ 10A, 20V
Vgs(th) (Max) @ Id:4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 20 V
Vgs (Max):+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds:870 pF @ 800 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AD
Package / Case:TO-247-3

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Quick Inquiry

In Stock 7979 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$11.00000$11
10$10.00000$100
25$9.25000$231.25
100$8.50000$850
450$7.75000$3487.5
900$7.00000$6300

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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