IXYP10N65B3D1

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Part Number	IXYP10N65B3D1
Manufacturer	IXYS
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	DISC IGBT XPT-GENX3 TO-220AB/FP
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	IXYP10N65B3D1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 23 - Dec 27 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

IXYP10N65B3D1 Specifications

Part Number:	IXYP10N65B3D1
Brand:	IXYS
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	IXYS
Product Status:	Active
IGBT Type:	PT
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	32 A
Current - Collector Pulsed (Icm):	62 A
Vce(on) (Max) @ Vge, Ic:	1.95V @ 15V, 10A
Power - Max:	160 W
Switching Energy:	300µJ (on), 200µJ (off)
Input Type:	Standard
Gate Charge:	20 nC
Td (on/off) @ 25°C:	17ns/125ns
Test Condition:	400V, 10A, 50Ohm, 15V
Reverse Recovery Time (trr):	29 ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220

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