IXTH3N200P3HV

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Part Number	IXTH3N200P3HV
Manufacturer	IXYS
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 2000V 3A TO247
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	IXTH3N200P3HV PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 23 - Dec 27 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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IXTH3N200P3HV Specifications

Part Number:	IXTH3N200P3HV
Brand:	IXYS
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	IXYS
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	2000 V
Current - Continuous Drain (Id) @ 25°C:	3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	70 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1860 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	520W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-247 (IXTH)
Package / Case:	TO-247-3

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