IXTD1R4N60P 11

IXTD1R4N60P 11
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Part Number IXTD1R4N60P 11
Manufacturer IXYS
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 1.4A DIE
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IXTD1R4N60P 11 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 09 - Nov 13 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IXTD1R4N60P 11 Specifications

Part Number:IXTD1R4N60P 11
Brand:IXYS
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:IXYS
Product Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id:5.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:5.2 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:140 pF @ 25 V
FET Feature:-
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Die
Package / Case:Die

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In Stock 57605 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
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Pricing (USD)

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