IXTA08N100D2

IXTA08N100D2
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Part Number IXTA08N100D2
Manufacturer IXYS
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 1000V 800MA TO263
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IXTA08N100D2 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 24 - Dec 28 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IXTA08N100D2 Specifications

Part Number:IXTA08N100D2
Brand:IXYS
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:IXYS
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:800mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:21Ohm @ 400mA, 0V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:14.6 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:325 pF @ 25 V
FET Feature:Depletion Mode
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263AA
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Quick Inquiry

In Stock 30139 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$1.86000$1.86
50$1.50000$75
100$1.35000$135
500$1.05000$525
1000$0.87000$870
2500$0.84000$2100

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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