IXTA06N120P

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Part Number	IXTA06N120P
Manufacturer	IXYS
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 1200V 600MA TO263
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	IXTA06N120P PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Oct 24 - Oct 28 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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IXTA06N120P Specifications

Part Number:	IXTA06N120P
Brand:	IXYS
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	IXYS
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	1200 V
Current - Continuous Drain (Id) @ 25°C:	600mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	32Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id:	4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:	13.3 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	270 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	42W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-263AA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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