IXST35N120B

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Part Number	IXST35N120B
Manufacturer	IXYS
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	IGBT 1200V 70A 300W TO268
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	IXST35N120B PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 18 - Nov 22 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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IXST35N120B Specifications

Part Number:	IXST35N120B
Brand:	IXYS
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	IXYS
Product Status:	Obsolete
IGBT Type:	PT
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	70 A
Current - Collector Pulsed (Icm):	140 A
Vce(on) (Max) @ Vge, Ic:	3.6V @ 15V, 35A
Power - Max:	300 W
Switching Energy:	5mJ (off)
Input Type:	Standard
Gate Charge:	120 nC
Td (on/off) @ 25°C:	36ns/160ns
Test Condition:	960V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package:	TO-268AA

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