IXST30N60B

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Part Number	IXST30N60B
Manufacturer	IXYS
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	IGBT 600V 55A 200W TO268
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	IXST30N60B PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 17 - Nov 21 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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IXST30N60B Specifications

Part Number:	IXST30N60B
Brand:	IXYS
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	IXYS
Product Status:	Obsolete
IGBT Type:	PT
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	55 A
Current - Collector Pulsed (Icm):	110 A
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 30A
Power - Max:	200 W
Switching Energy:	1.5mJ (off)
Input Type:	Standard
Gate Charge:	100 nC
Td (on/off) @ 25°C:	30ns/150ns
Test Condition:	480V, 30A, 4.7Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package:	TO-268AA

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