IXDP35N60B

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Part Number	IXDP35N60B
Manufacturer	IXYS
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	IGBT 600V 60A 250W TO220AB
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	IXDP35N60B PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 20 - Nov 24 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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IXDP35N60B Specifications

Part Number:	IXDP35N60B
Brand:	IXYS
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	IXYS
Product Status:	Active
IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	60 A
Current - Collector Pulsed (Icm):	70 A
Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 35A
Power - Max:	250 W
Switching Energy:	1.6mJ (on), 800µJ (off)
Input Type:	Standard
Gate Charge:	120 nC
Td (on/off) @ 25°C:	-
Test Condition:	300V, 35A, 10Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3

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