IXDN75N120

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Part Number	IXDN75N120
Manufacturer	IXYS
Category	Discrete Semiconductor › Transistors - IGBTs - Modules
Description	IGBT MOD 1200V 150A 660W SOT227B
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	IXDN75N120 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 07 - Dec 11 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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IXDN75N120 Specifications

Part Number:	IXDN75N120
Brand:	IXYS
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Modules
Manufacturer:	IXYS
Product Status:	Active
IGBT Type:	NPT
Configuration:	Single
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	150 A
Power - Max:	660 W
Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 75A
Current - Collector Cutoff (Max):	4 mA
Input Capacitance (Cies) @ Vce:	5.5 nF @ 25 V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	SOT-227-4, miniBLOC
Supplier Device Package:	SOT-227B

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