FII30-12E

FII30-12E
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Part Number FII30-12E
Manufacturer IXYS
Category Discrete SemiconductorTransistors - IGBTs - Arrays
Description IGBT H BRIDGE 1200V 33A I4PAK5
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models FII30-12E PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 05 - Dec 09 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

FII30-12E Specifications

Part Number:FII30-12E
Brand:IXYS
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - IGBTs - Arrays
Manufacturer:IXYS
Product Status:Obsolete
IGBT Type:NPT
Configuration:Half Bridge
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):33 A
Power - Max:150 W
Vce(on) (Max) @ Vge, Ic:2.9V @ 15V, 20A
Current - Collector Cutoff (Max):200 µA
Input Capacitance (Cies) @ Vce:1.2 nF @ 25 V
Input:Standard
NTC Thermistor:No
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:i4-Pac™-5
Supplier Device Package:ISOPLUS i4-PAC™

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