For Reference Only
| Part Number | SIGC25T60UNX1SA2 |
| Manufacturer | Infineon Technologies |
| Category | Discrete Semiconductor › Transistors - IGBTs - Single |
| Description | IGBT 3 CHIP 600V WAFER |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | SIGC25T60UNX1SA2 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Dec 24 - Dec 28 2024(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment | 
|
| Shipping |  |
| Part Number: | SIGC25T60UNX1SA2 |
| Brand: | Infineon Technologies |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - IGBTs - Single |
| Manufacturer: | Infineon Technologies |
| Product Status: | Obsolete |
| IGBT Type: | NPT |
| Voltage - Collector Emitter Breakdown (Max): | 600 V |
| Current - Collector (Ic) (Max): | 30 A |
| Current - Collector Pulsed (Icm): | 90 A |
| Vce(on) (Max) @ Vge, Ic: | 3.15V @ 15V, 30A |
| Power - Max: | - |
| Switching Energy: | - |
| Input Type: | Standard |
| Gate Charge: | - |
| Td (on/off) @ 25°C: | 16ns/122ns |
| Test Condition: | 400V, 30A, 1.8Ohm, 15V |
| Reverse Recovery Time (trr): | - |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | Die |
| Supplier Device Package: | Die |
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| In Stock | 83789 pieces - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $0.00000 | $0 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.
