SIGC25T60UNX1SA1

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Part Number	SIGC25T60UNX1SA1
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	IGBT 3 CHIP 600V WAFER
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	SIGC25T60UNX1SA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 17 - Nov 21 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

SIGC25T60UNX1SA1 Specifications

Part Number:	SIGC25T60UNX1SA1
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	Infineon Technologies
Product Status:	Obsolete
IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	30 A
Current - Collector Pulsed (Icm):	90 A
Vce(on) (Max) @ Vge, Ic:	3.15V @ 15V, 30A
Power - Max:	-
Switching Energy:	-
Input Type:	Standard
Gate Charge:	-
Td (on/off) @ 25°C:	16ns/122ns
Test Condition:	400V, 30A, 1.8Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	Die
Supplier Device Package:	Die

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