SGB15N120ATMA1

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Part Number	SGB15N120ATMA1
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	IGBT 1200V 30A 198W TO263-3
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	SGB15N120ATMA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 07 - Dec 11 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

SGB15N120ATMA1 Specifications

Part Number:	SGB15N120ATMA1
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	Infineon Technologies
Product Status:	Last Time Buy
IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	30 A
Current - Collector Pulsed (Icm):	52 A
Vce(on) (Max) @ Vge, Ic:	3.6V @ 15V, 15A
Power - Max:	198 W
Switching Energy:	1.9mJ
Input Type:	Standard
Gate Charge:	130 nC
Td (on/off) @ 25°C:	18ns/580ns
Test Condition:	800V, 15A, 33Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	PG-TO263-3-2

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