IRG8B08N120KDPBF

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Part Number	IRG8B08N120KDPBF
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	DIODE 1200V 8A TO-220
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	IRG8B08N120KDPBF PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 19 - Nov 23 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

IRG8B08N120KDPBF Specifications

Part Number:	IRG8B08N120KDPBF
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	Infineon Technologies
Product Status:	Obsolete
IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	15 A
Current - Collector Pulsed (Icm):	15 A
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 5A
Power - Max:	89 W
Switching Energy:	300µJ (on), 300µJ (off)
Input Type:	Standard
Gate Charge:	45 nC
Td (on/off) @ 25°C:	20ns/160ns
Test Condition:	600V, 5A, 47Ohm, 15V
Reverse Recovery Time (trr):	50 ns
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB

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