IPW65R190E6

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Part Number	IPW65R190E6
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	N-CHANNEL POWER MOSFET
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	IPW65R190E6 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Oct 25 - Oct 29 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

IPW65R190E6 Specifications

Part Number:	IPW65R190E6
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Infineon Technologies
Product Status:	Active
FET Type:	-
Technology:	-
Drain to Source Voltage (Vdss):	-
Current - Continuous Drain (Id) @ 25°C:	-
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	-
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	-
Input Capacitance (Ciss) (Max) @ Vds:	-
FET Feature:	-
Power Dissipation (Max):	-
Operating Temperature:	-
Mounting Type:	-
Supplier Device Package:	-
Package / Case:	-

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