IPT60R125G7XTMA1

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Part Number	IPT60R125G7XTMA1
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 650V 20A 8HSOF
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	IPT60R125G7XTMA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 24 - Dec 28 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

IPT60R125G7XTMA1 Specifications

Part Number:	IPT60R125G7XTMA1
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Infineon Technologies
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	125mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id:	4V @ 320µA
Gate Charge (Qg) (Max) @ Vgs:	27 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1080 pF @ 400 V
FET Feature:	-
Power Dissipation (Max):	120W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-HSOF-8-2
Package / Case:	8-PowerSFN

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