IPSA70R600P7SAKMA1

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Part Number	IPSA70R600P7SAKMA1
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 700V 8.5A TO251-3
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	IPSA70R600P7SAKMA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Sep 18 - Sep 22 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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IPSA70R600P7SAKMA1 Specifications

Part Number:	IPSA70R600P7SAKMA1
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Infineon Technologies
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	700 V
Current - Continuous Drain (Id) @ 25°C:	8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	600mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:	10.5 nC @ 400 V
Vgs (Max):	±16V
Input Capacitance (Ciss) (Max) @ Vds:	364 pF @ 400 V
FET Feature:	-
Power Dissipation (Max):	43.1W (Tc)
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO251-3
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA

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