IPN80R3K3P7ATMA1

IPN80R3K3P7ATMA1
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Part Number IPN80R3K3P7ATMA1
Manufacturer Infineon Technologies
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 800V 1.9A SOT223
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPN80R3K3P7ATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 28 - Dec 02 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IPN80R3K3P7ATMA1 Specifications

Part Number:IPN80R3K3P7ATMA1
Brand:Infineon Technologies
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Infineon Technologies
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.3Ohm @ 590mA, 10V
Vgs(th) (Max) @ Id:3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs:5.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:120 pF @ 500 V
FET Feature:-
Power Dissipation (Max):6.1W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223
Package / Case:TO-261-4, TO-261AA

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Quick Inquiry

In Stock 108359 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
3000$0.32309$969.27
6000$0.30318$1819.08
15000$0.29322$4398.3
30000$0.28779$8633.7

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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