IPN60R3K4CEATMA1

IPN60R3K4CEATMA1
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Part Number IPN60R3K4CEATMA1
Manufacturer Infineon Technologies
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 2.6A SOT223
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPN60R3K4CEATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 28 - Dec 02 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IPN60R3K4CEATMA1 Specifications

Part Number:IPN60R3K4CEATMA1
Brand:Infineon Technologies
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Infineon Technologies
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs:4.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:93 pF @ 100 V
FET Feature:Super Junction
Power Dissipation (Max):5W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-3
Package / Case:TO-261-4, TO-261AA

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Quick Inquiry

In Stock 33095 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
3000$0.18173$545.19
6000$0.17118$1027.08
15000$0.16063$2409.45
30000$0.15325$4597.5

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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