For Reference Only
| Part Number | IPN50R650CEATMA1 |
| Manufacturer | Infineon Technologies |
| Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
| Description | MOSFET N-CH 500V 9A SOT223 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | IPN50R650CEATMA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 22 - Nov 26 2024(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment | 
|
| Shipping |  |
| Part Number: | IPN50R650CEATMA1 |
| Brand: | Infineon Technologies |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | Infineon Technologies |
| Product Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 500 V |
| Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 13V |
| Rds On (Max) @ Id, Vgs: | 650mOhm @ 1.8A, 13V |
| Vgs(th) (Max) @ Id: | 3.5V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs: | 15 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 342 pF @ 100 V |
| FET Feature: | - |
| Power Dissipation (Max): | 5W (Tc) |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PG-SOT223-3 |
| Package / Case: | TO-261-4, TO-261AA |
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| In Stock | 114393 pieces - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 3000 | $0.31023 | $930.69 |
| 6000 | $0.29112 | $1746.72 |
| 15000 | $0.28156 | $4223.4 |
| 30000 | $0.27634 | $8290.2 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.
