For Reference Only
| Part Number | IPG20N10S4L35ATMA1 |
| Manufacturer | Infineon Technologies |
| Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Arrays |
| Description | MOSFET 2N-CH 8TDSON |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | IPG20N10S4L35ATMA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 26 - Nov 30 2024(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment | 
|
| Shipping |  |
| Part Number: | IPG20N10S4L35ATMA1 |
| Brand: | Infineon Technologies |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - FETs, MOSFETs - Arrays |
| Manufacturer: | Infineon Technologies |
| Product Status: | Active |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 100V |
| Current - Continuous Drain (Id) @ 25°C: | 20A |
| Rds On (Max) @ Id, Vgs: | 35mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id: | 2.1V @ 16µA |
| Gate Charge (Qg) (Max) @ Vgs: | 17.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1105pF @ 25V |
| Power - Max: | 43W |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-PowerVDFN |
| Supplier Device Package: | PG-TDSON-8-4 |
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| In Stock | 69596 pieces - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5000 | $0.47226 | $2361.3 |
| 10000 | $0.45450 | $4545 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.
