IPG20N10S4L35AATMA1

IPG20N10S4L35AATMA1
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Part Number IPG20N10S4L35AATMA1
Manufacturer Infineon Technologies
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 100V 20A 8TDSON
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPG20N10S4L35AATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Sep 18 - Sep 22 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IPG20N10S4L35AATMA1 Specifications

Part Number:IPG20N10S4L35AATMA1
Brand:Infineon Technologies
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Arrays
Manufacturer:Infineon Technologies
Product Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):100V
Current - Continuous Drain (Id) @ 25°C:20A
Rds On (Max) @ Id, Vgs:35mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:2.1V @ 16µA
Gate Charge (Qg) (Max) @ Vgs:17.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1105pF @ 25V
Power - Max:43W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-10

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Quick Inquiry

In Stock 68868 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
5000$0.51234$2561.7

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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