IPG20N10S4L22ATMA1

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Part Number	IPG20N10S4L22ATMA1
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Arrays
Description	MOSFET 2N-CH 8TDSON
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	IPG20N10S4L22ATMA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Sep 20 - Sep 24 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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IPG20N10S4L22ATMA1 Specifications

Part Number:	IPG20N10S4L22ATMA1
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Arrays
Manufacturer:	Infineon Technologies
Product Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	20A
Rds On (Max) @ Id, Vgs:	22mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:	2.1V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:	27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	1755pF @ 25V
Power - Max:	60W
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerVDFN
Supplier Device Package:	PG-TDSON-8-4

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