For Reference Only
Part Number | IPG20N06S4L11ATMA1 |
Manufacturer | Infineon Technologies |
Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Arrays |
Description | MOSFET 2N-CH 8TDSON |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | IPG20N06S4L11ATMA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 04 - Nov 08 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | IPG20N06S4L11ATMA1 |
Brand: | Infineon Technologies |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - FETs, MOSFETs - Arrays |
Manufacturer: | Infineon Technologies |
Product Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 20A |
Rds On (Max) @ Id, Vgs: | 11.2mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 28µA |
Gate Charge (Qg) (Max) @ Vgs: | 53nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 4020pF @ 25V |
Power - Max: | 65W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PG-TDSON-8-4 |
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In Stock | 56555 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
5000 | $0.92378 | $4618.9 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
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