IPD65R650CEAUMA1

IPD65R650CEAUMA1
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Part Number IPD65R650CEAUMA1
Manufacturer Infineon Technologies
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 650V 7A TO252-3
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPD65R650CEAUMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 14 - Nov 18 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IPD65R650CEAUMA1 Specifications

Part Number:IPD65R650CEAUMA1
Brand:Infineon Technologies
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Infineon Technologies
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:440 pF @ 100 V
FET Feature:-
Power Dissipation (Max):86W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63

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Quick Inquiry

In Stock 79615 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
2500$0.44340$1108.5
5000$0.41607$2080.35
12500$0.40241$5030.125
25000$0.39496$9874

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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