For Reference Only
| Part Number | IPB80N06S209ATMA2 |
| Manufacturer | Infineon Technologies |
| Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
| Description | MOSFET N-CH 55V 80A TO263-3 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | IPB80N06S209ATMA2 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 14 - Nov 18 2024(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment | 
|
| Shipping |  |
| Part Number: | IPB80N06S209ATMA2 |
| Brand: | Infineon Technologies |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | Infineon Technologies |
| Product Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 55 V |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 8.8mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 125µA |
| Gate Charge (Qg) (Max) @ Vgs: | 80 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2360 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 190W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PG-TO263-3-2 |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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| In Stock | 54819 pieces - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1000 | $0.84376 | $843.76 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.
