For Reference Only
Part Number | IMZA65R083M1HXKSA1 |
Manufacturer | Infineon Technologies |
Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
Description | SILICON CARBIDE MOSFET, PG-TO247 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | IMZA65R083M1HXKSA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Dec 25 - Dec 29 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | IMZA65R083M1HXKSA1 |
Brand: | Infineon Technologies |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - FETs, MOSFETs - Single |
Manufacturer: | Infineon Technologies |
Product Status: | Active |
FET Type: | N-Channel |
Technology: | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 26A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 18V |
Rds On (Max) @ Id, Vgs: | 111mOhm @ 11.2A, 18V |
Vgs(th) (Max) @ Id: | 5.7V @ 3.3mA |
Gate Charge (Qg) (Max) @ Vgs: | 19 nC @ 18 V |
Vgs (Max): | +20V, -2V |
Input Capacitance (Ciss) (Max) @ Vds: | 624 pF @ 400 V |
FET Feature: | - |
Power Dissipation (Max): | 104W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO247-4-3 |
Package / Case: | TO-247-4 |
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In Stock | 8297 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $13.60000 | $13.6 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.