IMW65R083M1HXKSA1

IMW65R083M1HXKSA1
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Part Number IMW65R083M1HXKSA1
Manufacturer Infineon Technologies
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description SILICON CARBIDE MOSFET, PG-TO247
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IMW65R083M1HXKSA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Sep 21 - Sep 25 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IMW65R083M1HXKSA1 Specifications

Part Number:IMW65R083M1HXKSA1
Brand:Infineon Technologies
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Infineon Technologies
Product Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):18V
Rds On (Max) @ Id, Vgs:111mOhm @ 11.2A, 18V
Vgs(th) (Max) @ Id:5.7V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 18 V
Vgs (Max):+20V, -2V
Input Capacitance (Ciss) (Max) @ Vds:624 pF @ 400 V
FET Feature:-
Power Dissipation (Max):104W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-41
Package / Case:TO-247-3

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Quick Inquiry

In Stock 7380 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$12.65000$12.65

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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