IMW120R090M1HXKSA1

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Part Number	IMW120R090M1HXKSA1
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	SICFET N-CH 1.2KV 26A TO247-3
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	IMW120R090M1HXKSA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jan 04 - Jan 08 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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IMW120R090M1HXKSA1 Specifications

Part Number:	IMW120R090M1HXKSA1
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Infineon Technologies
Product Status:	Active
FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1200 V
Current - Continuous Drain (Id) @ 25°C:	26A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	15V, 18V
Rds On (Max) @ Id, Vgs:	117mOhm @ 8.5A, 18V
Vgs(th) (Max) @ Id:	5.7V @ 3.7mA
Gate Charge (Qg) (Max) @ Vgs:	21 nC @ 18 V
Vgs (Max):	+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds:	707 pF @ 800 V
FET Feature:	-
Power Dissipation (Max):	115W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO247-3-41
Package / Case:	TO-247-3

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