IMW120R045M1XKSA1

IMW120R045M1XKSA1
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Part Number IMW120R045M1XKSA1
Manufacturer Infineon Technologies
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description SICFET N-CH 1.2KV 52A TO247-3
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IMW120R045M1XKSA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 06 - Nov 10 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IMW120R045M1XKSA1 Specifications

Part Number:IMW120R045M1XKSA1
Brand:Infineon Technologies
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Infineon Technologies
Product Status:Not For New Designs
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:52A (Tc)
Drive Voltage (Max Rds On, Min Rds On):15V
Rds On (Max) @ Id, Vgs:59mOhm @ 20A, 15V
Vgs(th) (Max) @ Id:5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 15 V
Vgs (Max):+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds:1900 pF @ 800 V
FET Feature:-
Power Dissipation (Max):228W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-41
Package / Case:TO-247-3

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Quick Inquiry

In Stock 4079 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$23.72000$23.72

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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