For Reference Only
| Part Number | IMW120R020M1HXKSA1 |
| Manufacturer | Infineon Technologies |
| Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
| Description | SIC DISCRETE |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | IMW120R020M1HXKSA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Dec 28 - Jan 01 2024(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment | 
|
| Shipping |  |
| Part Number: | IMW120R020M1HXKSA1 |
| Brand: | Infineon Technologies |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | Infineon Technologies |
| Product Status: | Active |
| FET Type: | N-Channel |
| Technology: | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss): | 1200 V |
| Current - Continuous Drain (Id) @ 25°C: | 98A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 15V, 18V |
| Rds On (Max) @ Id, Vgs: | 26.9mOhm @ 41A, 18V |
| Vgs(th) (Max) @ Id: | 5.2V @ 17.6mA |
| Gate Charge (Qg) (Max) @ Vgs: | 83 nC @ 18 V |
| Vgs (Max): | +20V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 3460 nF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 375W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | PG-TO247-3 |
| Package / Case: | TO-247-3 |
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| In Stock | 2879 pieces - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $39.67000 | $39.67 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.
