IMBG120R350M1HXTMA1

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Part Number	IMBG120R350M1HXTMA1
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	SICFET N-CH 1.2KV 4.7A TO263
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	IMBG120R350M1HXTMA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jan 11 - Jan 15 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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IMBG120R350M1HXTMA1 Specifications

Part Number:	IMBG120R350M1HXTMA1
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Infineon Technologies
Product Status:	Active
FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1200 V
Current - Continuous Drain (Id) @ 25°C:	4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	468mOhm @ 2A, 18V
Vgs(th) (Max) @ Id:	5.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	5.9 nC @ 18 V
Vgs (Max):	+18V, -15V
Input Capacitance (Ciss) (Max) @ Vds:	196 pF @ 800 V
FET Feature:	Standard
Power Dissipation (Max):	65W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO263-7-12
Package / Case:	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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