IKW50N65ES5XKSA1

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Part Number	IKW50N65ES5XKSA1
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	IGBT TRENCH 650V 80A TO247-3
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	IKW50N65ES5XKSA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 07 - Dec 11 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

IKW50N65ES5XKSA1 Specifications

Part Number:	IKW50N65ES5XKSA1
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	Infineon Technologies
Product Status:	Active
IGBT Type:	Trench
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	80 A
Current - Collector Pulsed (Icm):	200 A
Vce(on) (Max) @ Vge, Ic:	1.7V @ 15V, 50A
Power - Max:	274 W
Switching Energy:	1.23mJ (on), 550µJ (off)
Input Type:	Standard
Gate Charge:	120 nC
Td (on/off) @ 25°C:	20ns/127ns
Test Condition:	400V, 50A, 8.2Ohm, 15V
Reverse Recovery Time (trr):	70 ns
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	PG-TO247-3

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