IKW30N65ET7XKSA1

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Part Number	IKW30N65ET7XKSA1
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	IKW30N65ET7XKSA1
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	IKW30N65ET7XKSA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Sep 21 - Sep 25 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

IKW30N65ET7XKSA1 Specifications

Part Number:	IKW30N65ET7XKSA1
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	Infineon Technologies
Product Status:	Active
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	30 A
Current - Collector Pulsed (Icm):	90 A
Vce(on) (Max) @ Vge, Ic:	1.65V @ 15V, 30A
Power - Max:	188 W
Switching Energy:	590µJ (on), 500µJ (off)
Input Type:	Standard
Gate Charge:	180 nC
Td (on/off) @ 25°C:	20ns/245ns
Test Condition:	400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr):	80 ns
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	PG-TO247-3

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