IHD10N60RA

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Part Number	IHD10N60RA
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	IGBT 600V 20A 110W TO252-3
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	IHD10N60RA PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 16 - Nov 20 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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IHD10N60RA Specifications

Part Number:	IHD10N60RA
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	Infineon Technologies
Product Status:	Obsolete
IGBT Type:	Trench
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	20 A
Current - Collector Pulsed (Icm):	30 A
Vce(on) (Max) @ Vge, Ic:	1.9V @ 15V, 10A
Power - Max:	110 W
Switching Energy:	270µJ
Input Type:	Standard
Gate Charge:	62 nC
Td (on/off) @ 25°C:	-/170ns
Test Condition:	400V, 10A, 23Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3-11

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