IGW75N65H5XKSA1

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Part Number	IGW75N65H5XKSA1
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	IGBT TRENCH 650V 120A TO247-3
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	IGW75N65H5XKSA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 16 - Nov 20 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

IGW75N65H5XKSA1 Specifications

Part Number:	IGW75N65H5XKSA1
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	Infineon Technologies
Product Status:	Active
IGBT Type:	Trench
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	120 A
Current - Collector Pulsed (Icm):	300 A
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 75A
Power - Max:	395 W
Switching Energy:	2.25mJ (on), 950µJ (off)
Input Type:	Standard
Gate Charge:	160 nC
Td (on/off) @ 25°C:	28ns/174ns
Test Condition:	400V, 75A, 8Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	PG-TO247-3

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