IGW30N60H3

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Part Number	IGW30N60H3
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	IGW30N60 - DISCRETE IGBT WITHOUT
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	IGW30N60H3 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 07 - Dec 11 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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Shipping

IGW30N60H3 Specifications

Part Number:	IGW30N60H3
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	Infineon Technologies
Product Status:	Active
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	60 A
Current - Collector Pulsed (Icm):	120 A
Vce(on) (Max) @ Vge, Ic:	2.4V @ 15V, 30A
Power - Max:	187 W
Switching Energy:	940µJ (on), 440µJ (off)
Input Type:	Standard
Gate Charge:	165 nC
Td (on/off) @ 25°C:	21ns/207ns
Test Condition:	400V, 30A, 10.5Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	PG-TO247-3

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