For Reference Only
Part Number | IGT60R190D1SATMA1 |
Manufacturer | Infineon Technologies |
Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
Description | GANFET N-CH 600V 12.5A 8HSOF |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | IGT60R190D1SATMA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 07 - Nov 11 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | IGT60R190D1SATMA1 |
Brand: | Infineon Technologies |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - FETs, MOSFETs - Single |
Manufacturer: | Infineon Technologies |
Product Status: | Obsolete |
FET Type: | N-Channel |
Technology: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 12.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | 1.6V @ 960µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | -10V |
Input Capacitance (Ciss) (Max) @ Vds: | 157 pF @ 400 V |
FET Feature: | - |
Power Dissipation (Max): | 55.5W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-HSOF-8-3 |
Package / Case: | 8-PowerSFN |
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In Stock | 11051 pieces - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
2000 | $8.77241 | $17544.82 |
Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding
Please feel free to contact us for details.