IGT60R190D1SATMA1

IGT60R190D1SATMA1
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Part Number IGT60R190D1SATMA1
Manufacturer Infineon Technologies
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description GANFET N-CH 600V 12.5A 8HSOF
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IGT60R190D1SATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 01 - Dec 05 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IGT60R190D1SATMA1 Specifications

Part Number:IGT60R190D1SATMA1
Brand:Infineon Technologies
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Infineon Technologies
Product Status:Obsolete
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:1.6V @ 960µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-10V
Input Capacitance (Ciss) (Max) @ Vds:157 pF @ 400 V
FET Feature:-
Power Dissipation (Max):55.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HSOF-8-3
Package / Case:8-PowerSFN

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In Stock 11051 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
2000$8.77241$17544.82

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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