IGP01N120H2

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Part Number	IGP01N120H2
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	POWER BIPOLAR TRANSISTOR NPN
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	IGP01N120H2 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Nov 10 - Nov 14 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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IGP01N120H2 Specifications

Part Number:	IGP01N120H2
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	Infineon Technologies
Product Status:	Active
IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	3.2 A
Current - Collector Pulsed (Icm):	3.5 A
Vce(on) (Max) @ Vge, Ic:	2.8V @ 15V, 1A
Power - Max:	28 W
Switching Energy:	140µJ
Input Type:	Standard
Gate Charge:	8.6 nC
Td (on/off) @ 25°C:	13ns/370ns
Test Condition:	800V, 1A, 241Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	PG-TO220-3-1

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