IGD06N65T6ARMA1

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Part Number	IGD06N65T6ARMA1
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	HOME APPLIANCES 14 PG-TO252-3
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	IGD06N65T6ARMA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 26 - Dec 30 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

IGD06N65T6ARMA1 Specifications

Part Number:	IGD06N65T6ARMA1
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	Infineon Technologies
Product Status:	Not For New Designs
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	9 A
Current - Collector Pulsed (Icm):	18 A
Vce(on) (Max) @ Vge, Ic:	1.9V @ 15V, 3A
Power - Max:	31 W
Switching Energy:	60µJ (on), 30µJ (off)
Input Type:	Standard
Gate Charge:	13.7 nC
Td (on/off) @ 25°C:	15ns/35ns
Test Condition:	400V, 3A, 47Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3

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