IGB03N120H2ATMA1

IGB03N120H2ATMA1
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Part Number IGB03N120H2ATMA1
Manufacturer Infineon Technologies
Category Discrete SemiconductorTransistors - IGBTs - Single
Description IGBT 1200V 9.6A 62.5W TO263-3
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IGB03N120H2ATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 26 - Dec 30 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IGB03N120H2ATMA1 Specifications

Part Number:IGB03N120H2ATMA1
Brand:Infineon Technologies
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - IGBTs - Single
Manufacturer:Infineon Technologies
Product Status:Last Time Buy
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):9.6 A
Current - Collector Pulsed (Icm):9.9 A
Vce(on) (Max) @ Vge, Ic:2.8V @ 15V, 3A
Power - Max:62.5 W
Switching Energy:290µJ
Input Type:Standard
Gate Charge:22 nC
Td (on/off) @ 25°C:9.2ns/281ns
Test Condition:800V, 3A, 82Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:PG-TO263-3-2

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Quick Inquiry

In Stock 68998 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1000$0.96648$966.48

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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