IDB12E120ATMA1

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Part Number	IDB12E120ATMA1
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Diodes - Rectifiers - Single
Description	DIODE GEN PURP 1.2KV 28A TO263-3
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	IDB12E120ATMA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 26 - Dec 30 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
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IDB12E120ATMA1 Specifications

Part Number:	IDB12E120ATMA1
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Diodes - Rectifiers - Single
Manufacturer:	Infineon Technologies
Product Status:	Obsolete
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	1200 V
Current - Average Rectified (Io):	28A (DC)
Voltage - Forward (Vf) (Max) @ If:	2.15 V @ 12 A
Speed:	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):	150 ns
Current - Reverse Leakage @ Vr:	100 µA @ 1200 V
Capacitance @ Vr, F:	-
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	PG-TO263-3-2
Operating Temperature - Junction:	-55°C ~ 150°C

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