IAUC120N04S6N006ATMA1

IAUC120N04S6N006ATMA1
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Part Number IAUC120N04S6N006ATMA1
Manufacturer Infineon Technologies
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description IAUC120N04S6N006ATMA1
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IAUC120N04S6N006ATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 24 - Dec 28 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IAUC120N04S6N006ATMA1 Specifications

Part Number:IAUC120N04S6N006ATMA1
Brand:Infineon Technologies
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Infineon Technologies
Product Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tj)
Drive Voltage (Max Rds On, Min Rds On):7V, 10V
Rds On (Max) @ Id, Vgs:0.6mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:3V @ 130µA
Gate Charge (Qg) (Max) @ Vgs:151 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:10117 pF @ 25 V
FET Feature:-
Power Dissipation (Max):187W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-53
Package / Case:8-PowerTDFN

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Quick Inquiry

In Stock 22840 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$4.10000$4.1

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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