FF23MR12W1M1B11BOMA1

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Part Number	FF23MR12W1M1B11BOMA1
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Arrays
Description	MOSFET 2 N-CH 1200V 50A MODULE
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	FF23MR12W1M1B11BOMA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 07 - Dec 11 2025(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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Shipping

FF23MR12W1M1B11BOMA1 Specifications

Part Number:	FF23MR12W1M1B11BOMA1
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Arrays
Manufacturer:	Infineon Technologies
Product Status:	Last Time Buy
FET Type:	2 N-Channel (Dual)
FET Feature:	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:	50A
Rds On (Max) @ Id, Vgs:	23mOhm @ 50A, 15V
Vgs(th) (Max) @ Id:	5.55V @ 20mA
Gate Charge (Qg) (Max) @ Vgs:	125nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds:	3950pF @ 800V
Power - Max:	20mW
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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