FF200R12KE3HOSA1

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Part Number	FF200R12KE3HOSA1
Manufacturer	Infineon Technologies
Category	Discrete Semiconductor › Transistors - IGBTs - Modules
Description	IGBT MODULE 1200V 1050W
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	FF200R12KE3HOSA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Dec 27 - Dec 31 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

FF200R12KE3HOSA1 Specifications

Part Number:	FF200R12KE3HOSA1
Brand:	Infineon Technologies
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Modules
Manufacturer:	Infineon Technologies
Product Status:	Active
IGBT Type:	-
Configuration:	2 Independent
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	-
Power - Max:	1050 W
Vce(on) (Max) @ Vge, Ic:	2.15V @ 15V, 200A
Current - Collector Cutoff (Max):	5 mA
Input Capacitance (Cies) @ Vce:	14 nF @ 25 V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 125°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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