F415MR12W2M1B76BOMA1

F415MR12W2M1B76BOMA1
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Part Number F415MR12W2M1B76BOMA1
Manufacturer Infineon Technologies
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Arrays
Description LOW POWER EASY AG-EASY2B-2
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models F415MR12W2M1B76BOMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Nov 30 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

F415MR12W2M1B76BOMA1 Specifications

Part Number:F415MR12W2M1B76BOMA1
Brand:Infineon Technologies
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Arrays
Manufacturer:Infineon Technologies
Product Status:Last Time Buy
FET Type:4 N-Channel (Half Bridge)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:75A (Tj)
Rds On (Max) @ Id, Vgs:15mOhm @ 75A, 15V
Vgs(th) (Max) @ Id:5.55V @ 30mA
Gate Charge (Qg) (Max) @ Vgs:186nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds:5.52nF @ 800V
Power - Max:-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:AG-EASY1B-2

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In Stock 368 pieces - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$284.06000$284.06

Due to the impact of the COVID-19,the above prices have not been updated, please resend the inquiry to us, thank you for your understanding

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